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esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 1/22 fast ultra high-psrr, low-noise, low-dropout, 300ma micropower cmos linear regulator general description the emp893x series is a family of cmos linear regulators. it is consisted of emp8935, emp8936 and emp8938, featuring ultra-high power supply rejection ratio, low output voltage noise, low dropout voltage, low quiescent current and fast transient response. it guarantees delivery of 300ma output current, and supports preset 1.2v, 1.5v, 1.8v, 2.5v, 2.7v, 2.8v, 3.0v, 3.3v output voltage versions. based on its low quiescent current consumption and its less than 1 a shutdown mode of logical operation, the emp893x is ideal for battery-powered applications. it provides fast turn-on and start-up time by using dedicated circuitry to pre-charge an optional external bypass capacitor. this bypass capacitor is used to reduce the output voltage noise without adversely affecting the load transient response. the high power supply rejection ratio of the emp893x holds well for low input voltages typically encountered in battery- operated systems. the regulator is stable with small ceramic capacitive loads (2.2f typical). additional features include regulation fault detection, bandgap voltage reference, constant current limiting and thermal overload protection. the emp893x is available in miniature sot-23-5, sot-23-6, tdfn-6 and msop-8 packages. emp products is rohs compliant. features ? miniature sot-23-5, sot-23-6, msop-8 and tdfn-6 packages ? 300ma guaranteed output current ? 75db typical psrr at 1khz (60db typical at 10khz) ? 30v rms output voltage noise (10hz to 100khz) ? 110mv typical dropout at 300ma for msop-8 ? 106a typical quiescent current ? less than 1 a typical shutdown mode ? fast line and load transient response ? 80s typical fast turn-on time ? 2.5v to 5.5v input range ? stable with small ceramic output capacitors ? over temperature and over current protection ? 2% output voltage tolerance applications ? wireless handsets ? pcmcia cards ? dsp core power ? hand-held instruments ? battery-powered systems ? portable information appliances
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 2/22 connection diagrams msop-8(top view) tdfn-6(top view) note: version also available for pin #1 as fault pin and pin #5 as shdn pin sot-23-5(top view) sot-23-6(top view) order information emp8938-xxma08grr/nrr xx operation code ma08 msop-8 package grr rohs (pb free) rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel emp8935-xxfe06nrr xx operation code fe06 tdfn-6 package nrr rohs & halogen free rating: -40 to 85c package in tape & reel emp8935-xxvf05grr/nrr xx operation code vf05 sot-23-5 package grr rohs (pb free) rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel emp8936-xxvc06grr/nrr xx operation code vc06 sot-23-6 package grr rohs (pb free) rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 3/22 order, mark & packing information no. of pin en cc fault package marking vout product id 1.2 emp8935-12vf05grr 1.5 EMP8935-15VF05GRR 1.8 emp8935-18vf05grr 2.5 emp8935-25vf05grr 2.7 emp8935-27vf05grr 2.8 emp8935-28vf05grr 3.0 emp8935-30vf05grr 5 y y n sot-23-5 3.3 emp8935-33vf05grr 1.2 emp8936-12vc06grr 1.5 emp8936-15vc06grr 1.8 emp8936-18vc06grr 2.5 emp8936-25vc06grr 2.7 by request 2.8 by request 3.0 by request 6 y y y sot-23-6 3.3 by request 1.2 by request 1.5 by request 1.8 by request 2.5 by request 2.7 by request 2.8 by request 3.0 by request 8 y y y msop-8 3.3 by request 1.2 by request 1.5 by request 1.8 by request 2.5 by request 2.7 by request 2.8 by request 3.0 by request 5 y y n tdfn-6 3.3 by request
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 4/22 1.2 by request 1.5 by request 1.8 by request 2.5 by request 2.7 by request 2.8 by request 3.0 by request 6 y y y tdfn-6 3.3 by request old marking: please see the notice(page 20) package & packing sot-23-5 3k units tape & reel sot-23-6 3k units tape & reel msop-8 3k units tape & reel tdfn-6 5k units tape & reel
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 5/22 typical application pin functions name msop-8 sot-23-5 sot-23-6 tdfn-6 function vout 1, 4 5 6 4 output voltage feedback . vin 2 1 1 3 supply voltage input . require a minimum input capacitor of close to 1f to ensure stability and sufficient decoupling from the ground pin. gnd 3 2 2 2 ground pin . nc 5 5 or n/a no connection cc 6 4 4 6 compensation capacitor . connect an optimum 33nf noise bypass capacitor between the cc and the ground pins to reduce noise in vout. shdn 7 3 3 1 or 5 shutdown input. set the regulator into the disable mode by pulling the shdn pin low. to keep the regulator on during normal operation, connect the shdn pin to vin. the shdn pin must not exceed vin under all operating conditions. fault 8 5 n/a or 1 fault detection output. the fault pin goes low when the voltage regulating function fails. because the fault pin connects to the open-drain output of a nmos transistor, a typical 100k pull-up resistor is required to provide the necessary output voltage. the fault pin enters the high impedance state during shutdown and it should be connected to ground if unused.
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 6/22 absolute maximum ratings (notes 1, 2) vin, vout, v shdn , vset, vcc, v fault -0.3v to 6.5v power dissipation (note 3) storage temperature range -65c to160c junction temperature (tj) 150c lead temperature (10 sec.) 260c esd rating human body model (note 5) 2kv thermal resistance ( ja) msop-8 223c/w tdfn-6 (note 3) sot-23-5 250c/w sot-23-6 250c/w operating ratings (note 1, 2) temperature range -40c to 85c supply voltage 2.5v to 5.5v electrical characteristics unless otherwise specified, all limits guaranteed for v in = v out +0.5v (note 6), v shdn = v in , c in = c out = 2.2f, c cc = 33nf, t j = 25c. boldface limits apply for the operating temperature extremes: -40c and 85c. symbol parameter conditions min typ (note 7) max units v in input voltage 2.5 5.5 v -2 +2 v otl output voltage tolerance 100a i out 300ma v in = v out (nom) +0.5v v in 5.5v , (note 6) -3 +3 % of v out (nom) i out maximum output current average dc current rating 300 ma i limit output current limit 330 550 ma i out = 0ma 106 200 270 supply current i out = 300ma 180 i q shutdown supply current v out = 0v, shdn = gnd 0.001 a i out = 1ma 0.02 i out = 200ma 75 190 dropout voltage (msop-8) (note 4), (note 6) i out = 300ma 110 280 i out = 1ma 0.03 i out = 200ma 90 190 v do dropout voltage (sot-23-5, sot-23-6, dfn-6) (note 4), (note 6) i out = 300ma 130 280 mv line regulation i out = 1ma, (v out + 0.5v) v in 5.5v (note 4) -0.1 0.02 0.1 %/v v out load regulation 100a i out 300ma 0.0003 0.005 %/ma e n output voltage noise i out = 10ma, 10hz f 100khz 30 v rms v ih , (v out + 0.5v) v in 5.5v (note 4) 1.2 v shdn shdn input threshold v il , (v out + 0.5v) v in 5.5v (note 4) 0.4 v i shdn shdn input bias current shdn = gnd or vin 0.1 100 na v fault fault detection voltage (msop-8) v out 2.5v, i out = 200ma (note 8) 110 330 mv
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 7/22 fault detection voltage (sot-23-5, sot-23-6) v out 2.5v, i out = 200ma (note 8) 125 330 fault output low voltage i sink = 2ma 0.2 0.4 v i fault fault off-leakage current fault = 3.6v, shdn = 0v 0.1 100 na thermal shutdown temperature 165 t sd thermal shutdown hysteresis 30 t on start-up time c out = 10f, v out at 90% of final value 80 s note 1: absolute maximum ratings indicate limits beyond which damage may occur. electrical specifications are not applicable when the device is operated outside of its rated operating conditions. note 2: all voltages are defined and measured with respect to the potential at the ground pin. note 3: maximum power dissipation for the device is ca lculated using the following equations: ja a t - j(max) t d p = where t j(max) is the maximum junction temperature, t a is the ambient temperature, and ja is the junction-to-ambient thermal resistance. e.g. for the msop-8 package ja = 223c/w, t j(max) = 150c and using t a = 25c, the maximum power dissipation is found to be 561mw. the derating factor (-1/ ja ) = -4.5mw/c, thus below 25c the power dissipation figure can be increase d by 4.5mw per degree, and similarity decreased by this factor for temperatures above 25c. the value of the ja for the tdfn package is specifically dependent on the pcb trace area, trace material, and the number of layers and thermal vias. note 4: dropout voltage is measured by reducing v in until v out drops 100mv from its nominal value at v in -v out = 0.5v. dropout voltage does not apply to the regulator versions with v out less than 2.5v. note 5: human body model: 1.5k in series with 100pf. note 6: condition does not apply to input voltages below 2.5v since this is the minimum input operating voltage. note 7: typical values represent the most likely parametric norm. note 8: the fault detection voltage is specified for the input to output voltage differential at which the fault pin goes active low.
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 8/22 functional block diagram fig.1. emp893x functional block diagram
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 9/22 typical performance characteristics unless otherwise specified, vin = v out (nom) + 0.5v, c in = c out = 2.2f, c cc = 33nf, t a = 25c, v shdn = vin. psrr vs frequency psrr vs frequency frequency (hz) psrr vs frequency frequency (hz) psrr vs frequency frequency (hz) frequency (hz) psrr vs frequency frequency (hz) psrr vs frequency frequency (hz) psrr (db) psrr (db) psrr (db) psrr (db) psrr (db) psrr (db)
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 10/22 typical performance characteristics unless otherwise specified, vin = v out (nom) + 0.5v, c in = c out = 2.2f, c cc = 33nf, t a = 25c, v shdn = vin. (continued) psrr vs frequency psrr vs frequency frequency (hz) psrr vs frequency frequency (hz) psrr vs frequency frequency (hz) frequency (hz) psrr vs frequency frequency (hz) psrr vs frequency frequency (hz) psrr (db) psrr (db) psrr (db) psrr (db) psrr (db) psrr (db)
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 11/22 typical performance characteristics unless otherwise specified, vin = v out (nom) + 0.5v, c in = c out = 2.2f, c cc = 33nf, t a = 25c, v shdn = vin. (continued) line transient 400 s/div load transient 400 s/div dropout voltage vs. load current (for different output voltages) load current (ma) line transien 400 s/div enable and disable 400 s/div dropout voltage vs. load current (for different output voltages) load current (ma) i out =10ma v out (10mv/div) v out i out 50mv/div 100ma/div 3.3v 4.3v vin i out =300ma v out (10mv/div) 3.3v 4.3v vin v out (1v/div) v shdn (2v/div) dropout voltage (mv) dropout voltage (mv) 1ma~300ma
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 12/22 typical performance characteristics unless otherwise specified, vin = v out (nom) + 0.5v, c in = c out = 2.2f, c cc = 33nf, t a = 25c, v shdn = vin. (continued) fault detect threshold vs. load current fault detect threshold vs. load current load current (ma) supply current vs. input voltage input voltage (v) load current (ma) supply current vs. load current load current (ma) fault detect threshold (mv) supply current (a) supply current (a) fault detect threshold (mv)
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 13/22 application information general description referring to figure 1 of the functional block diagram, the emp893x is designed in such a way that a negative feedback control is used to perform the desired voltage regulating function. the negative feedback is formed by using feedback resistors (r1, r2) to sample the output voltage for the non-inverting input of the error amplifier, whose inverting input is set to the bandgap reference voltage. due to its high open-loop gain, the error amplifier operates to ensure that the sampled output feedback voltage at its non-inverting input is virtually equal to the preset bandgap reference voltage. to control the amount of current reaching the output, the error amplifier compares the voltage difference at its inputs and produces an appropriate driving voltage to the p-channel mos pass transistor. if there are changes in the output voltage due to load changes, the feedback resistors register such changes to the non-inverting input of the error amplifier. the error amplifier then adjusts its driving voltage to maintain virtual short between its two input nodes under all loading conditions. hence, the regulation of the output voltage is achieved as a direct result of the error amplifier keeping its input voltages equal. this negative feedback control topology is further augmented by the shutdown, the fault detection, and the temperature and current protection circuitry. output capacitor to take advantage of the savings in cost and space as well as the superior filtering of high frequency noise, the emp893x is specially designed for use with ceramic output capacitors of as low as 2.2f. capacitors of higher value or other types may be used, as long as its equivalent series resistance (esr) is restricted to less than 0.5 . the use of larger capacitors with smaller esr values is desirable for applications involving large and fast input or output transients, as well as for situations where the application systems are not physically located immediately adjacent to the battery power source. typical ceramic capacitors suitable for use with the emp893x are x5r and x7r. the x5r and the x7r capacitors are able to maintain their capacitance values to within 20% and 10%, respectively, as the temperature increases. no-load stability the emp893x can maintain stable operation during no-load conditions, a required feature for some applications such as cmos ram keep-alive operations. input capacitor a minimum input capacitance of 1f is required for emp893x. the capacitor value may be increased without limit. caution shall be taken as the instability may result from long supply lead inductance coupling to the output through the gate capacitance of the pass transistor. this will establish a pseudo lcr network, and is likely to happen under high current conditions or near dropout. a 10f tantalum input capacitor will dampen the parasitic lcr action thanks to its high esr. however, cautions should be exercised to avoid regulator short-circuit damage when tantalum capacitors are used, for they are prone to fail in short-circuit operating conditions. compensation (noise bypass) capacitor to reduce the output voltage noise of the emp893x, the bypass capacitor cc (33nf optimum) can be connected between pin 6 and the ground. because pin 6 connects directly to the high impedance output of the bandgap reference circuit, the level of the dc leakage currents in the cc capacitors used will adversely reduce the regulator output voltage. this sets the dc leakage level as the key selection criterion of the cc capacitor types for use with the emp893x. npo and cog ceramic capacitors typically offer very low leakage. although the use of the cc capacitors does
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 14/22 application information (continued) not affect the transient response, it does affect the turn-on time of the regulator. tradeoff exists between output noise level and turn-on time when selecting the cc capacitor value. power dissipation and thermal shutdown excessive power dissipation may cause thermal overload, and hence the increase of the ic junction temperature beyond a safe operating level. the emp893x relies on dedicated thermal shutdown circuitry to limit its total power dissipation. an ic junction temperature tj exceeding 165c will trigger the thermal shutdown logic, turning off the p-channel mos pass transistor. the pass transistor turns on again after the junction cools off by about 30c. when continuous thermal overload conditions persist, this thermal shutdown action then results in a pulsed waveform at the output of the regulator. the concept of thermal resistance ja (c/w) is often used to describe an ic junction?s relative readiness in allowing its thermal energy to dissipate to its ambient air. an ic junction with a low thermal resistance is preferred because it is relatively effective in dissipating its thermal energy to its ambient, thus resulting in a relatively low and desirable junction temperature. the relationship between ja and t j is as follows: t j = ja (pd) + t a t a is the ambient temperature, and p d is the power generated by the ic and can be written as: p d = i out (v in - v out ) as the above equations indicate, it is desirable to work with ics whose ja values are small such that t j does not increase strongly with p d . to avoid thermally overloading the emp893x, refrain from exceeding the absolute maximum junction temperature rating of 150c under continuous operating conditions. overstressing the regulator with high loading currents and elevated input-to-output differential voltages can increase the ic die temperature significantly. fault detection in the event of the occurrence of various fault conditions that cause failure in the output voltage regulation, such as during thermal overload or current limit, the fault pin of the emp893x becomes low. because the fault pin connects to the open-drain output of a n-channel mos transistor, a large pull-up resistor (100k typical) is required to provide the necessary output voltage and yet without compromising the overall power consumption performance of the regulator. the fault pin also goes low when the input-to-output differential voltage becomes too small to sustain good load and line regulation at the output. this occurs typically during near dropout when the input-to-output differential voltage is less than 105mv for a load current of 200ma. the emp893x detects near dropout conditions by comparing the differential voltage against a predefined differential threshold that is always slightly above the dropout voltage. this differential threshold is dynamical in the sense that it not only tracks the dropout voltage as the load current varies, but also scale linearly with the load current. shutdown when the shdn pin is low, the emp893x enters the sleep mode. when this occurs, the pass transistor, the error amplifier, and the biasing circuits, including the application information (continued) bandgap reference, are turned off, thus reducing the supply current to typically 1na. such a low supply
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 15/22 current makes the emp893x an ideal device for battery-powered applications. the maximum guaranteed voltage at the shdn pin for the sleep mode to take effect is 0.4v. a minimum guaranteed voltage of 1.2v at the shdn pin activates the emp893x. direct connection of the shdn pin to the v in to keep the regulator on is allowed for the emp893x. in this case, the shdn pin must not exceed the supply voltage v in . fast start-up fast start-up time is one of the important factors for overall system efficiency improvement. the emp893x has a fast start-up speed when using the optional noise bypass capacitor (cc). to shorten start-up time, the emp893x internally supplies a 500a current to charge up the capacitor until it reaches about 90% of its final value.
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 16/22 physical dimensions msop-8 o symbpls min. nom. max. a 1.1 a1 0 0.15 a2 0.75 0.85 0.95 d 3.00 bsc e 4.90 bsc e1 3.00 bsc l 0.4 0.6 0.8 l1 0.95 bsc 0 8 unit: mm
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 17/22 sot-23-5 o 2 symbpls min. nom. max. a 1.05 1.20 1.35 a1 0.05 0.10 0.15 a2 1.00 1.10 1.20 b 0.30 0.50 c 0.08 0.20 d 2.80 2.90 3.00 e 2.60 2.80 3.00 e1 1.50 1.60 1.70 e 0.95 bsc e1 1.90 bsc l 0.30 0.45 0.55 l1 0.60 ref 0 5 10 2 6 8 10 unit: mm
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 18/22 sot-23-6 o 2 symbpls min. nom. max. a 1.45 a1 0.15 a2 0.90 1.15 1.30 b 0.30 0.50 c 0.08 0.22 d 2.90 bsc. e 2.80 bsc. e1 1.60 bsc. e 0.95 bsc e1 1.90 bsc l 0.30 0.45 0.60 l1 0.60 ref l2 0.25 ref 0 4 8 2 5 10 15 unit: mm
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 19/22 tdfn-6 common dimensions millimeter dimensions inch symbol min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.027 0.029 0.031 a3 0.200 ref 0.008 ref b 0.25 0.30 0.35 0.010 0.012 0.014 d 2.00 bsc 0.079 bsc d2 1.20 1.30 1.40 0.046 0.050 0.054 e 2.00 bsc 0.079 bsc e2 0.50 0.60 0.70 0.022 0.024 0.026 e 0.650 bsc 0.026 bsc l 0.25 0.30 0.35 0.009 0.011 0.013
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 20/22 notice: order, mark & packing information vout code product id no. of pin package old marking (xx) vout order information p621 p621 date code 12 1.2 emp8935-12vf05grr p624 p624 date code 15 1.5 EMP8935-15VF05GRR p627 p627 date code 18 1.8 emp8935-18vf05grr p62e p62e date code 25 2.5 emp8935-25vf05grr p62g p62g date code 27 2.7 emp8935-27vf05grr p62h p62h date code 28 2.8 emp8935-28vf05grr p62j p62j date code 30 3.0 emp8935-30vf05grr emp8935 5 sot-23-5 p62m p62m date code 33 3.3 emp8935-33vf05grr package & packing sot-23-5 3k units tape & reel
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 21/22 revision history revision date description 7.0 2009.05.08 emp transferred from version 6.3
esmt/emp emp893x elite semiconductor memory technology inc./ elite micropower inc. publication date : may 2009 revision : 7.0 22/22 important notice all rights reserved. no part of this document may be reproduced or duplicated in any form or by any means without th e prior permission of esmt. the contents contained in this document are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and re serves the right to change the products or specification in this document without notice. the information contained herein is presented only as a guide or examples for the application of ou r products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted under any patents, copyrights or other intelle ctual property rights of esmt or others. any semiconductor devices may have inherently a certain rate of failure. to minimize risks associ ated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage . if products described here are to be used for such kinds of applic ation, purchaser must do its own quality assurance testing appropriate to such applications.

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